Monolithic integration of III-V devices on silicon


The vast majority of research on silicon photonics has focused on devices operating within near-infrared (NIR) telecommunication bands from 1310 nm to 1550 nm wavelength. It was driven by the low-cost photonics fabricated with existing complementary metal-oxide-semiconductor (CMOS) infrastructure and the large market for telecommunications with the ever-increasing demands. Our group works on the monolithic integration of III-V MWIR photonic devices on Silicon. These technologies can offer potentially high performance, high yield, and low-cost products, significantly reshaping the current mid-infrared market.stu