- Our paper “Quantum Dot Quantum Cascade Detector on Si Substrate” has been accepted by CLEO conference, which will be hold on May 13th -18th in San Jose, California, USA (Feb, 2018)
Professor. Baile Chen received his bachelor degree in physics from Department of Modern Physics in University of Science and Technology of China in Hefei, China, in 2007. He received his master degree in physics and Ph.D degree in electrical engineering both from University of Virginia, Charlottesville, VA, USA in 2009 and 2013, respectively. After he finished his PhD, he worked in the large multi-national RF company, Qorvo Inc (formerly Triquint Semiconductor), Hillsboro, Oregon, USA. As a result, he understood how a company is operating, right from business planning, product design to maufacturing. This helps Professor Chen work with industrial partners and do useful research. In Qorvo, he mainly focused on various RF power amplifiers and BAW filters in multi-band LTE wireless handset. In January, 2016, he joined in the School of Information Science and Technology in Shanghai Tech University as a tenure track assistant professor.
PhD in Electrical Engineering, 2013
University of Virginia, Charlottesville, VA, USA
Master in Physics, 2009
University of Virginia, Charlottesville, VA, USA
BS in Physics, 2007
University of Science and Technology of China in Hefei, China
The recent explosive growth in communications has been brought about by fiber optic and wireless communications technologies. These two technologies have merged to create an interdisciplinary area called microwave photonics, including RF optical links, oscillators, and radar. The research in the Optoelectronic Device Group at ShanghaiTech University is focused on the development of optoelectronic components and technologies that enable new applications and advances in microwave photonic systems. One of the key devices for the signal generation in microwave photonic systems is the high-speed, high power photodiode. Our work includes the development of state-of-the-art Silicon based, GaAs based, InP based high-speed, high power photodetectors and arrays.
The vast majority of research on silicon photonics has focused on devices operating within near-infrared (NIR) telecommunication bands from 1310nm to 1550nm wavelength. This has been driven by the low cost photonics fabricated with existing complementary metal-oxide-semiconductor (CMOS) infrastructure and the large market for telecommunications with the ever increasing demands. Our group collaborated with University of London College works on the monolithic integration of III-V SWIR/MWIR photonic devices on Silicon. These technologies can offer potentially high performance, high yield and low cost products, which will reshape the current mid-infrared market significantly.
Short-wavelength infrared (SWIR)/mid-wavelength infrared (MWIR) have a wide range of applications in free space communications, gas monitor, chemical sensing and medical applications. Our group works on InP based on InGaAs/GaAsSb(Bi) type-II multiple quantum wells for laser diodes and photodiodes applications, which enjoys the mature process technologies developed by InP based fiber optics communications.
J28. Yaojiang Chen, Zhiyang Xie, Jian Huang, Zhuo Deng, Baile Chen,* “High-speed uni-traveling carrier photodiode for 2 μm wavelength application”, Optica, 2019 6(7), 884-889
J27. Jian Huang#, Yating Wan#, Daehwan Jung, Justin Norman, Chen Shang, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers, Baile Chen*， “Low frequency noise spectroscopy characterization of InAs/InGaAs quantum dots p-i-n photodetector grown on GaAs-on-V-grooved-Si substrate ”, ACS Photonics, 2019 6 (5), 1100-1105
J26. Zhuo Deng#, Daqian Guo#, Jian Huang, Huiyun Liu, Jiang Wu, Baile Chen*, “Mid-wave infrared InAs/GaSb type-II superlattice photodetector with p-i-B-n deisgn grown on GaAs substrate “, IEEE Journal of Quantum Electronics, 55(4), 1-5
J25. Jian Huang, Baile Chen,* Zhuo Deng, Yi Gu, Yingjie Ma, Jian Zhang, Xiren Chen, and Jun Shao, “ Deep levels analysis in wavelength extended InGaAsBi photodetector”, Semiconductor Science and Technology, 34 (2019) 095018 (7pp)
J24. Xiujun Hao, Yu Zhao, Qihua Wu, Xin Li, Yan Teng, Min Xiong, Yong Huang, Baile Chen, and Hui Yang, “InAs/GaSb superlattice photodetector with cutoff wavelength around 12 μm based on an Al-free nBn structure grown by MOCVD”, Semiconductor Science and Technology, 34(6), 065013
J23. Zhiyang Xie, Yaojiang Chen, Ningtao Zhang, and Baile Chen*, “High-speed uni-travelling-carrier photodiode at 1064nm wavelength”, IEEE Photonics Technology Letters 31 (16), 1331-1334, 2019
J22. Zhuo Deng#, Daqian Guo#, Claudia González Burguete, Jian Huang, Zongheng Xie, Huiyun Liu, Jiang Wu, and Baile Chen, “ Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector “, Infrared Physics & Technology 101, 133-137, 2019
J21. Yaojiang Chen, Baile Chen*, “Design of InP Based High Speed Photodiode for 2 μm Wavelength Application”, IEEE Journal of Quantum Electronics, Vol 55, No 1, pp. 1-8, 2019
J20. Yaojiang Chen, Xuyi Zhao, Jian Huang, Zhuo Deng, Chunfang Cao, Qian Gong, Baile Chen*, “Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes”, Optics Express, Vol. 26, Issue 26, pp. 35034-35045 (2018)
J19. Jian Huang, Daqian Guo, Zhuo Deng, Wei Chen, Huiyun Liu, Jiang Wu, and Baile Chen*, “Mid-wave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate”, IEEE Journal of Lightwave Technology, pp. 4033-4038, VOL. 36, NO. 18, SEPTEMBER 15, 2018
J18. Wei Chen, Zhuo Deng, Daqian Guo, Yaojiang Chen, Yuriy Mazur, Yurii Maidaniuk, Mourad Benamara, Gregory J Salamo, Huiyun Liu, Jiang Wu, Baile Chen*, “Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-well Mid-wave Infrared Photodetectors Grown on Silicon Substrate”, IEEE Journal of Lightwave Technology, Vol 36, No 12, pp. 2572-2581, 2018
J17. Zhuo Deng, Baile Chen*, Xiren Chen, Jun Shao, Qian Gong, Huiyun Liu, Jiang Wu, “Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate”, Infrared Physics & Technology, Volume 90, Pages 115–121, 2018
J16. Claudia González Burguete, Daqian Guo, Pamela Jurczak, Fan Cui, Mingchu Tang, Wei Chen, Zhuo Deng, Yaojiang Chen, Marina Gutiérrez, Baile Chen, Huiyun Liu, Jiang Wu, “Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates”, IET Optoelectronics 12 (1), 2-4, 2018
J15. J Huang, D Guo, W Chen, Z Deng, Y Bai, T Wu, Y Chen, H Liu, J Wu, Baile Chen*, “Sub-monolayer quantum dot quantum cascade mid-infrared photodetector” , Applied Physics Letters 111 (25), 251104, 2017
J14. Baile Chen*, “Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantum wells lasers”, Optics Express Vol 25 (21), pp. 25183-25192, 2017
J13. Baile Chen*, “Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers,” IEEE Transactions on Electron Devices, vol. 64, pp. 1606-1611, 2017.
J12. Baile Chen*, A. L. Holmes Jr “InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region” Optics Letters, Vol. 38, Issue 15, pp. 2750-2753 (2013)
J11. Baile Chen, W.Y. Jiang, Jinrong Yuan, A. L. Holmes Jr, Bora. M. Onat “SWIR/MWIR InP-based PIN Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells” IEEE QUANTUM ELECTRONICS, VOL. 47, ISSUE 9, September, 2011, 1244-1250
J10. Baile Chen, W.Y. Jiang, Jinrong Yuan, A. L. Holmes Jr, Bora. M. Onat. “Demonstration of a Room Temperature InP-based Photodetector Operating beyond 3 μm”, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 23, NO. 4, FEBRUARY 15, 2011, 218-220
J9. Baile Chen, A. L. Holmes Jr “Carrier Dynamics Study of InP-based PIN Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells” J. Phys. D: Appl. Phys Vol 46 (31), 315103, 2013
J8. Baile Chen, Qiugui Zhou, Dion C.McIntosh, Jinrong Yuan, Yaojia Chen, Wenlu Sun, Joe C. Campbell, A. L. Holmes Jr. “Natural Lithography Nano-sphere Texturing as Antireflective Layer on InGaAs PIN Photodiodes” IEEE Electronics Letters, October 11, 2012, Volume 48, Issue 21, p.1340–1341
J7. Baile Chen, W.Y. Jiang, A. L. Holmes Jr, “Design of Strain Compensated InGaAs/GaAsSb Type-II Quantum Well Structures for Mid-infrared Photodiodes” Optical and Quantum Electronics, Volume 44, Issue 3 (2012), Page 103-109
J6. Baile Chen, A. L. Holmes Jr, “Optical Gain Modeling of InP Based InGaAs(N)/GaAsSb Type-II Quantum Wells Laser for Mid-Infrared Emission” Optical and Quantum Electronics: Volume 45, Issue 2 (2013), Page 127-134
J5. Baile Chen, Jinrong Yuan, A. L. Holmes Jr. “Dark Current Modeling of InP based SWIR and MWIR InGaAs/GaAsSb Type-II MQW Photodiodes”, Optical and Quantum Electronics: Volume 45, Issue 3 (2013), Page 271-277
J4. Wenjie Chen, Baile Chen, Archie Holmes, Patrick Fay, “Investigation of traps in strained-well InGaAs/GaAsSb quantum well photodiodes”, Electronics Letters 51 (18), 1439 – 1440
J3. Wenjie Chen, Baile Chen, Jinrong Yuan, Archie Holmes, Patrick Fay “Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiode” Applied Physics Letters 101, 052107 (2012)
J2. Jinrong Yuan, Baile Chen, Archie L. Holmes, Jr. “Improved Quantum Efficiency of InGaAs/InP Photodetectors using a Ti/Au-SiO2 Phase-Matched-Layer reflector”, Electronics Letters Volume 48, Issue 19, p.1230–1232
J1. Jinrong Yuan, Baile Chen, Archie L. Holmes, Jr. “Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP” Electronics Letters, September 29, 2011 Volume: 47 Issue:20, page(s): 1144 – 1145
C15. Baile Chen, “Si based MWIR photodetectors”, Light conference, July 17-18, 2019, Changchun, China, (Invited Talk)
C14. Baile Chen, “高速InP基二类超晶格探测器”, 第二十二届全国半导体物理学术会议Hangzhou, July 9-12, 2019
C13. Baile Chen, “InP based type-II superlattice photodetectors”, 第二届全国锑化物半导体学术及产业促进大会，January 9-10, Guanzhou，China (Invited Keynote Speaker)
C12. Jian Huang, Daqian Guo, Zhuo Deng, Huiyun Liu, Jiang Wu, Baile Chen, “Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate”, Asia Communications and Photonics Conference, October 26-29, 2018, Hangzhou, China
C11. Yaojiang Chen, Qian Gong, Baile Chen, “Speed Characterization of InGaAs/GaAsSb Type-II Quantum Wells PIN Photodiodes”, Asia Communications and Photonics Conference, October 26-29, 2018, Hangzhou, China
C10. Yaojiang Chen, Baile Chen, “Uni-Traveling Carrier Photodiode for High Speed and High Power Application”, Asia Communications and Photonics Conference, October 26-29, 2018, Hangzhou, China
C9. Wei Chen, Zhuo Deng, Baile Chen, Huiyun Liu, Jiang Wu, “Dark Current Analysis of Mid-Wave Quantum Dots-in-a-Well Photodetectors Monolithically Grown on Silicon Substrate”, Asia Communications and Photonics Conference, October 26-29, 2018, Hangzhou, China
C8. Jian Huang, Daqian Guo, Zhuo Deng, Wei Chen, Tinghui Wu, Yaojiang Chen, Huiyun Liu, Jiang Wu, Baile Chen, “Quantum Dot Quantum Cascade Detector on Si Substrate”, CLEO, Laser Science to Photonic Applications, 13-18, May, 2018, San Jose, CA, USA
C7. Baile Chen, A. L. Holmes Jr, Viktor Khalfin, Igor Kudryashov, Bora. M. Onat. “Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k·p method” SPIE Defense, Security, and Sensing 2012, 23 - 27 April 2012, Baltimore, Maryland, USA
C6. Baile Chen, Wenlu Sun, Joe C. Campbell and A. L. Holmes Jr. “Quantum Efficiency Modeling of PIN Photodiodes with InGaAs/GaAsSb Quantum Wells Absorption Region” 2011 IEEE Photonics Conference, 9-13 October 2011, Arlington, Virginia, USA, Page 35, Paper MD4
C5. Baile Chen, A. L. Holmes Jr, W.Y. Jiang, Jinrong Yuan, “Design of Strain Compensated InGaAs/GaAsSb Type-II Quantum Well Structures for Mid-infrared Photodiodes” 11th Annual NUSOD Conference, 5-8 September 2011, Rome, Italy, Paper ThC4
C4. Baile Chen, Jinrong Yuan, A. L. Holmes Jr. “Modeling of the electrical characteristics of SWIR/MWIR InGaAs/GaAsSb type-II MQW photodiodes” SPIE Defense, Security, and Sensing 2011, 25 – 29, April 2011, Orlando, Florida, USA
C3. Wenjie. Chen, Baile Chen, J. Yuan, A. Holmes, and P. Fay, “Characterization and Impact of Traps in Lattice-Matched and Strain-Compensated In1-xGaxAs/GaAs1-ySby Multiple Quantum Well Photodiodes” Device Research Conference Jun 18-20, 2012 Penn State University, University Park, PA, USA.
C2. Weiyang Jiang, Baile Chen, Jinrong Yuan, A. L. Holmes Jr. “Design and characterization of strain-compensated GaInAs/GaAsSb type-II MQW structure with operation wavelength at ~3 µm” SPIE Defense, Security, and Sensing 2010, 5 – 9, April 2010, Orlando, Florida, USA.
C1. Wenlu Sun, Xiaoguang Zheng, Zhiwen Lu, Baile Chen, Archie L. Holmes Jr. and Joe C. Campbell “Numerical Simulation of InAlAs/InAlGaAs Tandem Avalanche Photodiodes” 2011 IEEE Photonics Conference, 9-13 October 2011, Arlington, Virginia, USA, Page 280, Paper TuK3.
Please email Prof. Chen an up-to-date resume and course transcripts. Consideration will be given in a case by case scenario.
We strongly encourage qualified candidates to apply for graduate studies at School of Information Science and Technology at ShanghaiTech. Please indicate your interest in working with Prof. Chen when you apply to our programs.
A PhD in electrical engineering, physics, or materials science. Hands-on, in-depth experience with semiconductor processing, device fabrication and device characterization is required. Extensive knowledge of material growth (MBE or MOCVD) and material characterization is a plus. Hands-on experience of characterization high speed optoelectronics device is highly desirable. Qualified applicants are invited to submit (all in English) a resume, research statement(describing research experience and career plan), copies of two representative publications, and two letters of reference to: email@example.com and copied to Dr. Baile Chen (email: firstname.lastname@example.org). We provide very competitive salary and benefits for this post.