Monolithic integration of III-V devices on silicon


The vast majority of research on silicon photonics has focused on devices operating within near-infrared (NIR) telecommunication bands from 1310nm to 1550nm wavelength. This has been driven by the low cost photonics fabricated with existing complementary metal-oxide-semiconductor (CMOS) infrastructure and the large market for telecommunications with the ever increasing demands. Our group collaborated with University of London College works on the monolithic integration of III-V SWIR/MWIR photonic devices on Silicon. These technologies can offer potentially high performance, high yield and low cost products, which will reshape the current mid-infrared market significantly. stu