Journals (# co-first authors, * corresponding authors):
J90. Jingyi Wang#, Beibei Pan#, Zi Wang#, Jiakai Zhang, Zhiqi Zhou, Lu Yao, Yanan Wu, Wuwei Ren, Jianyu Wang, Haiming Ji, Jingyi Yu*, Baile Chen*, “Single-pixel p-graded-n junction spectrometers”, Nature Communications 15 (1), 1773, 2024
J89. Zhijian Shen#, Jinshan Yao#, Jian Huang, Zhecheng Dai, Luyu Wang, Fengyu Liu, Xinbo Zou, Bo Peng, Weimin Liu, Hong Lu*, Baile Chen*， “High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector with Inductive Peaked Dewar Packaging”，Journal of Lightwave Technology 42 (5), 1504-1510, 2024
J88. Haolan Qu, Wei Huang, Yu Zhang, Jin Sui, Jiaxiang Chen, Baile Chen, David Wei Zhang, Yuangang Wang, Yuanjie Lv, Zhihong Feng, Xinbo Zou, “Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures”, Journal of Vacuum Science & Technology A 42 (2), 2024
J87. S Yu, H Kang, X Shen, Y Xue, W Wan, C Zou, B Chen, J Lu, “Poling-assisted hydrofluoric acid wet etching of thin-film lithium niobate”, Optics Letters 49 (4), 854-857, 2024
J86. Jingyi Wang, Huachen Ge, Yue Liao, Daqi Shen, Linze Li, Mengxin Zha, Tianyu Long, Qiushi Chen, Zhiyang Xie, Haiming Ji, Pengfei Tian*, Baile Chen*, “InGaP/AlGaAs Near-UV and Visible Avalanche Photodiodes for Li-Fi Application”, IEEE Photonics Technology Letters 2024 Vol. 36 Issue 5 Pages 293-296
J85. W. Wang#, J. Yao#, L. Li, H. Ge, L. Wang, L. Zhu, Q. Chen, H. Lu*, and Baile Chen*, “High-speed InAlAs digital alloy avalanche photodiode,” Applied Physics Letters, vol. 123, no. 19, pp. 191102, 2023.
J84. H. Xie, H. Guo, L. Zhu, L. Yang, C. Shen, B. Chen, L. Chen, and L. He, “Study on high gain-bandwidth product HgCdTe MWIR electron avalanche photodiodes,” Infrared Physics & Technology, vol. 135, pp. 104994, 2023.
J83. Y. Zhang, Y. Gu, J. Chen, Y. Zhu, B. Chen, H. Jiang, K. M. Lau, and X. Zou, “Small Vth Shift and Low Dynamic Ron in GaN MOSHEMT With ZrO2 Gate Dielectric,” IEEE Transactions on Electron Devices, vol. 70, no. 11, pp. 5590-5595, 2023.
J82. H. Liu, J. Wang, D. Guo, K. Shen, B. Chen, and J. Wu, “Design and Fabrication of High Performance InGaAs near Infrared Photodetector,” Nanomaterials, vol. 13, no. 21, 2023.
J81. Jinshan Yao, Jiayi Li, Qihang Zhang, Zongyan Zuo, Weiwei Zhang, Wenyang Wang, Chen Li, Baile Chen, Yu Deng, Xuejin Zhang, Hong Lu, Yan-Feng Chen, “Large redshift in photoluminescence of InAs/AlAs short-period superlattices due to highly ordered lateral composition modulation”, Journal of Vacuum Science & Technology A, 41(4), 042705, 2023
J80. Lu Yao, Wenyang Wang, Jinshan Yao, Kechao Lu, Hong Lu, Changcheng Zheng, Baile Chen*, “Interband transitions of InAs/AlAs Short-Period superlattices grown by molecular beam epitaxy”, Journal of Crystal Growth 2023 Vol. 605 Pages 127071
J79. Liqi Zhu, Huachen Ge, Huijun Guo, Lu Chen, Chun Lin, Baile Chen*, “Gain and Excess Noise in HgCdTe e-Avalanche Photodiodes at Various Temperatures and Wavelengths”, IEEE Transactions on Electron Devices 2023 Vol. 70 Issue 5 Pages 2384-2388
J78. Liqi Zhu, Huijun Guo, Zhiqi Zhou, Zhiyang Xie, Hao Xie, Lu Chen, Chun Lin, Baile Chen*, “Bandwidth Characterization and Optimization of High-Performance Mid-wavelength Infrared HgCdTe e-Avalanche Photodiodes”, Infrared Physics & Technology 2023 Vol. 131 Pages 104682
J77. Luyu Wang, Zhiyang Xie, Beibei Pan, Zhiqi Zhou, Linze Li, Xinbo Zou, Haiming Ji, Baile Chen*, “High-Speed Photodetector With Simultaneous Electrical Power Generation”, Journal of Lightwave Technology 2023 Vol. 41 Issue 2 Pages 662-670
J76.Daqian Guo, Jian Huang, Mourad Benamara, Yuriy I Mazur, Zhuo Deng, Gregory J Salamo, Huiyun Liu, Baile Chen, Jiang Wu, “High operating temperature mid-infrared InGaAs/GaAs submonolayer quantum dot quantum cascade detectors on silicon”, IEEE Journal of Quantum Electronics 2023 Vol. 59 Issue 2 Pages 1-7
J75. Yinan Zhao, Kechao Lu, Jinshan Yao, Jiqiang Ning, Baile Chen, Hong Lu, Changcheng Zheng, “Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy”, Scientific Reports 2023 Vol. 13 Issue 1 Pages 123
J74. Jinshan Yao, Jiayi Li, Qihang Zhang, Zongyan Zuo, Weiwei Zhang, Wenyang Wang, Chen Li, Baile Chen, Yu Deng, Xuejin Zhang, Hong Lu, Yan-Feng Chen, “Large redshift in photoluminescence of InAs/AlAs short-period superlattices due to highly ordered lateral composition modulation”, Journal of Vacuum Science & Technology A 2023 Vol. 41 Issue 4, 042705
J73. Jian Huang, Zhecheng Dai, Zhijian Shen, Zongti Wang, Zhiqi Zhou, Ziyu Wang, Bo Peng, Weimin Liu, Baile Chen*, “High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Traveling Carrier Photodetectors With Different Absorber Doping”, IEEE Transactions on Electron Devices 2022 Vol. 69 Issue 12 Pages 6890-6896
J72. Baile Chen*, “Equivalent circuit model of the RF characteristics of multi-stage infrared photodetectors”, Journal of Lightwave Technology 2022 Vol. 40 Issue 15 Pages 5224-5230
J71. Zongti Wang, Jian Huang, Liqi Zhu, Zhiqi Zhou, Xuyi Zhao, Antian Du, Wenfu Yu, Ruotao Liu, Qian Gong, Baile Chen*, “High-performance InP-based bias-tunable near-infrared /extended-short wave infrared dual-band photodetectors”, Journal of Lightwave Technology 2022 Vol. 40 Issue 5 Pages 5157-5162
J70. Zhiqi Zhou, Liqi Zhu, Zhiyang Xie, Baile Chen*,“Monte Carlo Simulation of High-Speed MWIR HgCdTe e-APD”, IEEE Transactions on Electron Devices, Vol. 69 Issue 7 Pages 3753-3760, 2022
J69. Linze Li#, Rui Pan#, Zhiyang Xie, Yao Lu, Jiaxiang Chen, Xinbo Zou, Ziyuan Yuan, Menglin Chang, Hong Lu*, and Baile Chen*， “High-speed Ge-on-GaAs photodetector”，Optics Express 2022, 30 (12), 20684-20696.
J68. Jiajun Yu, Yinan Zhao, Siqi Li, Jinshan Yao, Lu Yao, Jiqiang Ning, Yucheng Jiang, Hong Lu*, Baile Chen* , Changcheng Zheng*, “Carrier localization effect in the photoluminescence of In composition engineered InAlAs random alloy”, Journal of Luminescence (2022), Vol. 249 Pages 119009
J67. Jingyi Wang, Zhiyang Xie, Liqi Zhu, Xuyi Zhao, Wenfu Yu, Ruotao Liu, Antian Du, Qian Gong and Baile Chen*, “InP-based Broadband Photodetectors with InGaAs/GaAsSb Type-II Superlattice”, IEEE Electron Device Letters 2022, 43 (5), 757-760.
J66, Jiaxiang Chen, Wei Huang, Haolan Qu, Yu Zhang, Jianjun Zhou, Baile Chen, and Xinbo Zou*, “Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy”, Applied Physics Letters 120, 212105 (2022)
J65, Wenhan Song, Haowen Guo, Yitian Gu, Junmin Zhou, Jin Sui, Baile Chen, Wei Huang, Xinbo Zou “Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection” Electronics 2022， 11 (13), 1958
J64. Yitian Gu , Wei Huang, Yu Zhang, Jin Sui, Yangqian Wang , Haowen Guo, Jianjun Zhou, Baile Chen, and Xinbo Zou*, “Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si”, IEEE Transactions on Electron Devices 2022, 69 (6), 3302-3309.
J63. Kaimin Xu, Liang Ke, Hongbin Dou, Rui Xu, Wenjia Zhou, Qi Wei, Xinzuo Sun, Hao Wang, Haobo Wu, Lin Li *, Jiamin Xue, Baile Chen, Tsu-Chien Weng, Li Zheng, Yuehui Yu, and Zhijun Ning*, “Large Photomultiplication by Charge-Self-Trapping for High-Response Quantum Dot Infrared Photodetectors”, ACS Appl Mater Interfaces 2022, 14 (12), 14783–14790.
J62. Huang Jian, Shen Zhijian, Wang Zongti, Zhou Zhiqi, Wang Ziyu, Peng Bo, Liu Weimin, Chen Yiqiao, Baile Chen*, “High-speed Mid-wave Infrared Uni-traveling Carrier Photodetector Based on InAs/InAsSb Type-II Superlattice”, IEEE Electron Device Letters 2022, 43 (5), 745-748.
J61. Liang Wang, Liqi Zhu, Zhicheng Xu, Fangfang Wang, Jianxin Chen*, Baile Chen, “Investigation of low frequency noise-current correlation for the InAs/GaSb type-II superlattice long-wavelength infrared detector”, Optical and Quantum Electronics 2022, 54 (5).
J60. Hao Xiujun, Teng Yan, Zhu He, Liu Jiafeng, Zhu Hong, Huai Yunlong, Li Meng, Chen Baile, Huang Yong*, Yang Hui, “High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD”, Journal of Semiconductors 2022, 43 (1), 012303.
J59. Han Xuepeng, Guo Huijun, Yang Liao, Zhu Liqi, Yang Dan, Xie Hao, Wang Fang, Chen Lu, Chen Baile, He Li*, “Dark current and noise analysis for Long-wavelength infrared HgCdTe avalanche photodiodes”, Infrared Physics & Technology 2022, 123, 104108.
J58. Liqi Zhu, Huijun Guo, Zhuo Deng, Liao Yang, Jian Huang, Dan Yang, Zhiqi Zhou, Chuan Shen, Lu Chen, Chun Lin, Baile Chen*, “Temperature-Dependent Characteristics of HgCdTe Mid-Wave Infrared E-Avalanche Photodiode”, IEEE Journal of Selected Topics in Quantum Electronics, vol. 28, no. 2, pp. 1-9, March-April 2022, Art no. 3802709
J57. Zhiyang Xie, Zhiqi Zhou, Linze Li, Zhuo Deng, Haiming Ji and Baile Chen*, “High-Speed 850 nm Photodetector for Zero-Bias Operation,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 28, no. 2, pp. 1-7, March-April 2022, Art no. 3801007
J56. Zhenjie Song#, Zhiqi Zhou#, Jian Huang, Xinbo Zou, Chun Yang*, Baile Chen*, “Analysis of AM-to-PM conversion in MUTC photodiodes based on an equivalent circuit model”, Optics Express, Vol 29, Issue 21, pp. 33582-33591, 2021
J55. Min Zhu, Yuan Ren, Leidang Zhou, Jiaxiang Chen, Haowen Guo, Liqi Zhu, Baile Chen, Liang Chen, Xing Lu, Xinbo Zou*, “Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes”, Microelectronics Reliability, Volume 125, pp. 114345, 2021
J54. Wenyang Wang#, Jinshan Yao#, Jingyi Wang, Zhuo Deng, Zhiyang Xie, Jian Huang, Hong Lu*, Baile Chen*, “Characteristics of thin InAlAs digital alloy avalanche photodiodes”, Optics Letters, vol. 46, no. 16, pp. 3841-3844, 2021.
J53. Gu Yitian, Wang Yangqian, Chen Jiaxiang, Chen Baile, Wang Maojun, Zou Xinbo*, “Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs”, IEEE Transactions on Electron Devices, vol. 68, no. 7, pp. 3290-3295, 2021
J52. Jinshan Yao, Rui Pan, Wenyang, Wang, Chen Li, Baile Chen* , Hong Lu*, Yan-Feng Chen, “Large tunable bandgaps in the InAs/AlAs strain-compensated short-period superlattices grown by molecular beam epitaxy”, Applied Physics Letters, vol. 118, no. 25, p. 252103, 2021
J51. Zongheng Xie, Zhuo Deng, Jian Huang, Zhiyang Xie, Zhiqi Zhou, Baile Chen*, “InP-based extended-short wave infrared heterojunction phototransistor”, Journal of Lightwave Technology, vol. 39, no. 14, pp. 4814-4819, 2021
J50. Jiaxiang Chen.; Haoxun Luo; HaoLan Qu; Min Zhu; Haowen Guo; Baile Chen; Yuanjie Lv; Xing Lu; Xinbo Zou*, “Single-trap emission kinetic in vertical β-Ga2O3 Schottky diodes by deep level transient spectroscopy”, Semiconductor Science and Technology 2021, 36 (5), 055015.
J49. Li Jianian, Wang, Baosheng, Zhang Dajun, Li Chenzhe, Zhu Yihui, Zou Yi, Chen Baile, Wu Tao, Wang Xiong*, “A Preclinical System Prototype for Focused Microwave Breast Hyperthermia Guided by Compressive Thermoacoustic Tomography”, IEEE Transactions on Bio-medical Engineering, vol. 68, no. 7, pp. 2289-2300, 2021
J48. Li Xiuli, Peng Linzhi, Liu Zhi*, Zhou Zhiqi, Zheng Jun, Xue Chunlai, Zuo Yuhua, Chen Baile, Cheng Buwen, “30 GHz GeSn photodetector on SOI substrate for 2µm wavelength application”, Photonics Research 2021, 9 (4), 494-500.
J47. Teng Yan, Hao Xiujun, Zhu Hong, Zhu He, Liu Jiafeng, Huai Yunlong, Li Meng, Liu Ming, Xing Weirong, Chen Baile, Deng Zhuo, Huang Yong*, “Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array”, IEEE Access, vol. 9, pp. 60689-60694, 2021.
J46. Zhijian Shen#, Zhuo Deng#, Xuyi Zhao#, Jian Huang, Chunfang Cao, Xinbo Zou, Fengyu Liu, Qian Gong*, Baile Chen*, “Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate”, Applied Physics Letters 118, 081102 (2021)
J45. Baile Chen*, Yaojiang Chen, “Recent Advances in High Speed Photodetectors for eSWIR/MWIR/LWIR applications” (Invited Review), Photonics, Vol. 8, No. 1, page 14, 2021
J44. Zhijian Shen#, Zhuo Deng#, Xuyi Zhao#, Jian Huang, Lu Yao, Xinbo Zou, Chunfang Cao, Qian Gong*, Baile Chen*, “Long-wave infrared sub-monolayer quantum dotquantum cascade photodetector”, IEEE Journal of Lightwave Technology, 39(5), 1489-1496 (2021)
J43. Zhiyang Xie, Jian Huang, Xuliang Chai, Zhuo Deng, Yaojiang Chen, Qi Lu, Zhicheng Xu, Jianxin Chen, Yi Zhou*, and Baile Chen*, “High-speed Mid-Wave Infrared Interband Cascade Photodetector at Room Temperature”, Optics Express 28 (24), 36915-36923, 2020
J42. Y Wang, Y Gu, X Lu, H Jiang, H Guo, Baile Chen, KM Lau, X Zou, “Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K”, IEEE Journal of the Electron Devices Society 8, 850-856, 2020
J41. Zongheng Xie, Zhuo Deng, Xinbo Zou, Baile Chen*, “InP based near infrared/extended-short wave infrared dual-band photodetector”, IEEE Photonics Technology Letters, 2020, 32(16), 1003-1006
J40. Liqi Zhu#, Zhuo Deng#, Jian Huang, Huijun Guo, Lu Chen, Chun Lin*, Baile Chen*, “Low frequency noise-dark current correlations in HgCdTe infrared photodetectors”, Optics Express，2020, 28(16), 23660-23669
J39. Jia-Feng Liu#, Ning-Tao Zhang#, Yan Teng, Xiu-Jun Hao, Yu Zhao, Ying Chen, He Zhu, Hong Zhu, Qi-Hua Wu, Xin Li, Baile Chen* , Yong Huang*, “Short-wavelength infrared InAs/GaSb superlattice hole avalanche photodiode”, Chinese Physics B, Vol 29, No. 11 (2020) 117301
J38. Jian Huang, Zhiyang Xie, Yaojiang Chen, John Bowers, Baile Chen*, “High Speed Mid-Wave Infrared Uni-traveling Carrier Photodetector”, IEEE Journal of Quantum Electronics, Vol. 56, Issue 4, Page 1-7, August, 2020
J37. Yaojiang Chen, Zhiqi Zhou, Pingchuan Ma, Baile Chen*, “Nonlinear Characteristics of Uni-Traveling Carrier Photodiode with InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber”, IEEE/OSA Journal of Lightwave Technology, Vol. 38, Issue 17, Page 4867-4873, 2020
J36. Kaimin Xu, Xiongbin Xiao, Wenjia Zhou, Xianyuan Jiang, Qi Wei, Hao Chen, Zhuo Deng, Jian Huang, Baile Chen, Zhijun, Ning*, “Inverted Si:PbS Colloidal Quantum Dots Heterojunction Based Infrared Photodetector”, ACS Applied Materials & Interfaces 2020, 12, 13, 15414-15421
J35. Ningtao Zhang, Andrew Jones, Zhuo Deng, Baile Chen*, “Defect characterization of AlInAsSb digital alloy avalanche photodetectors with low frequency noise spectroscopy”, Optics Express 2020, 28(8), 11682-11691
J34. Weihong Shen, Jiangbing Du*, Lin Sun, Chang Wang, Yuzhu Zhu, Ke Xu, Baile Chen, and Zuyuan He, “Low-Latency and High-Speed Hollow-Core Fiber Optical Interconnection at 2-Micron Waveband”, IEEE/OSA Journal of Lightwave Technology, 2020, 38(15), 3874-3882
J33. Yating Wan#*, Chen Shang#, Jian Huang#, Zhiyang Xie, Aditya Jain, Justin Norman, Baile Chen*, Arthur Gossard, John Bowers, “Low-dark current 1.55 micrometer InAs quantum dash waveguide photodiodes”，ACS Nano, 2020, 14(3), 3519-3527
J32. Baile Chen*#, Yating Wan#, Zhiyang Xie, Jian Huang, Chen Shang, Justin Norman, Qiang Li, Yeyu Tong, Kei May Lau, Arthur C. Gossard, John E. Bowers, “Low dark current high gain InAs quantum dot avalanche photodiodes monolithically grown on Si”, ACS Photonics 2020, 7(2), 528-533
J31.Xiujun Hao, Yan Teng, Yu Zhao, Qihua Wu, Xin Li, Jiafeng Liu, Ying Chen, He Zhu, Baile Chen, Zhuo Deng, Jian Huang, Yong Huang* and Hui Yang, “Demonstration of a dual-band InAs/GaSb type-II superlattice infrared detector based on a single heterojunction diode”, IEEE Journal of Quantum Electronics, Vol. 56, No. 2, 4300106, APRIL 2020
J30. Liqi Zhu, Jian Huang, Zongheng Xie, Zhuo Deng, Lu Chen, Chun Lin, and Baile Chen*, “Low frequency noise spectroscopy characterization of HgCdTe infrared detectors”, IEEE Transactions on Electron Devices, Vol. 67, No. 2, 547-551, FEBRUARY 2020
J29. Yaojiang Chen#, Xuliang Chai#, Zhiyang Xie, Zhuo Deng, Ningtao Zhang, Yi Zhou*, Zhicheng Xu, Jianxin Chen, Baile Chen*, “High-Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaAsSb Type-II Superlattice”, IEEE/OSA Journal of Lightwave Technology, Vol. 38, Issue 4, 939-945, FEBRUARY 2020
J28. Yaojiang Chen, Zhiyang Xie, Jian Huang, Zhuo Deng, Baile Chen*, “High-speed uni-traveling carrier photodiode for 2 $\mu$m wavelength application”, Optica, 2019 6(7), 884-889
J27. Jian Huang#, Yating Wan#, Daehwan Jung, Justin Norman, Chen Shang, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers, Baile Chen*, “Defect Characterization of InAs/InGaAs Quantum Dot p‐i‐n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate”, ACS Photonics, 2019 6 (5), 1100-1105
J26. Zhuo Deng#, Daqian Guo#, Jian Huang, Huiyun Liu, Jiang Wu*, Baile Chen*, “Mid-wave infrared InAs/GaSb type-II superlattice photodetector with p-i-B-n deisgn grown on GaAs substrate “, IEEE Journal of Quantum Electronics, 55(4), 4000205, AUGUST 2019
J25. Jian Huang, Baile Chen*, Zhuo Deng, Yi Gu, Yingjie Ma, Jian Zhang, Xiren Chen, and Jun Shao, “ Deep levels analysis in wavelength extended InGaAsBi photodetector”, Semiconductor Science and Technology, 34 (2019) 095018 (7pp)
J24. Xiujun Hao, Yu Zhao, Qihua Wu, Xin Li, Yan Teng, Min Xiong, Yong Huang*, Baile Chen, and Hui Yang, “InAs/GaSb superlattice photodetector with cutoff wavelength around 12 μm based on an Al-free nBn structure grown by MOCVD”, Semiconductor Science and Technology, 34(6), 065013
J23. Zhiyang Xie, Yaojiang Chen, Ningtao Zhang, and Baile Chen*, “InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength”, IEEE Photonics Technology Letters 31 (16), 1331-1334, 2019
J22. Zhuo Deng#, Daqian Guo#, Claudia González Burguete, Jian Huang, Zongheng Xie, Huiyun Liu, Jiang Wu*, and Baile Chen*, “ Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector “, Infrared Physics & Technology 101, 133-137, 2019
J21. Yaojiang Chen, Baile Chen*, “Design of InP Based High Speed Photodiode for 2 μm Wavelength Application”, IEEE Journal of Quantum Electronics, Vol 55, No 1, pp. 1-8, 2019
J20. Yaojiang Chen, Xuyi Zhao, Jian Huang, Zhuo Deng, Chunfang Cao, Qian Gong, Baile Chen*, “Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes”, Optics Express, Vol. 26, Issue 26, pp. 35034-35045 (2018)
J19. Jian Huang#, Daqian Guo#, Zhuo Deng, Wei Chen, Huiyun Liu, Jiang Wu*, and Baile Chen*, “Mid-wave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate”, IEEE/OSA Journal of Lightwave Technology, pp. 4033-4038, VOL. 36, NO. 18, SEPTEMBER 15, 2018
J18. Wei Chen#, Zhuo Deng#, Daqian Guo, Yaojiang Chen, Yuriy Mazur, Yurii Maidaniuk, Mourad Benamara, Gregory J Salamo, Huiyun Liu, Jiang Wu*, Baile Chen*, “Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-well Mid-wave Infrared Photodetectors Grown on Silicon Substrate”, IEEE/OSA Journal of Lightwave Technology, Vol 36, No 12, pp. 2572-2581, 2018
J17. Zhuo Deng, Baile Chen*, Xiren Chen, Jun Shao*, Qian Gong, Huiyun Liu, Jiang Wu*, “Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate”, Infrared Physics & Technology, Volume 90, Pages 115–121, 2018
J16. Claudia González Burguete, Daqian Guo, Pamela Jurczak, Fan Cui, Mingchu Tang, Wei Chen, Zhuo Deng, Yaojiang Chen, Marina Gutiérrez, Baile Chen, Huiyun Liu, Jiang Wu*, “Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates”, IET Optoelectronics 12 (1), 2-4, 2018
J15. J Huang, D Guo, W Chen, Z Deng, Y Bai, T Wu, Y Chen, H Liu, J Wu*, Baile Chen*, “Sub-monolayer quantum dot quantum cascade mid-infrared photodetector” , Applied Physics Letters 111 (25), 251104, 2017
J14. Baile Chen*, “Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantum wells lasers”, Optics Express Vol 25 (21), pp. 25183-25192, 2017
J13. Baile Chen*, “Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers,” IEEE Transactions on Electron Devices, vol. 64, pp. 1606-1611, 2017.
J12. Baile Chen*, A. L. Holmes Jr “InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region” Optics Letters, Vol. 38, Issue 15, pp. 2750-2753 (2013)
J11. Baile Chen*, A. L. Holmes Jr “Carrier Dynamics Study of InP-based PIN Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells” J. Phys. D: Appl. Phys Vol 46 (31), 315103, 2013
J10. Baile Chen*, A. L. Holmes Jr, “Optical Gain Modeling of InP Based InGaAs(N)/GaAsSb Type-II Quantum Wells Laser for Mid-Infrared Emission” Optical and Quantum Electronics: Volume 45, Issue 2 (2013), Page 127-134
J9. Baile Chen*, Jinrong Yuan, A. L. Holmes Jr. “Dark Current Modeling of InP based SWIR and MWIR InGaAs/GaAsSb Type-II MQW Photodiodes”, Optical and Quantum Electronics: Volume 45, Issue 3 (2013), Page 271-277
J8. Wenjie Chen, Baile Chen, Archie Holmes, Patrick Fay, “Investigation of traps in strained-well InGaAs/GaAsSb quantum well photodiodes”, Electronics Letters 51 (18), 1439 – 1440
J7. Wenjie Chen, Baile Chen, Jinrong Yuan, Archie Holmes, Patrick Fay “Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiode” Applied Physics Letters 101, 052107 (2012)
J6. Jinrong Yuan, Baile Chen, Archie L. Holmes, Jr. “Improved Quantum Efficiency of InGaAs/InP Photodetectors using a Ti/Au-SiO2 Phase-Matched-Layer reflector”, Electronics Letters Volume 48, Issue 19, p.1230–1232
J5. Jinrong Yuan, Baile Chen, Archie L. Holmes, Jr. “Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP” Electronics Letters, September 29, 2011 Volume: 47 Issue:20, page(s): 1144 – 1145
J4. Baile Chen, Qiugui Zhou, Dion C.McIntosh, Jinrong Yuan, Yaojia Chen, Wenlu Sun, Joe C. Campbell, A. L. Holmes Jr. “Natural Lithography Nano-sphere Texturing as Antireflective Layer on InGaAs PIN Photodiodes” IEEE Electronics Letters, October 11, 2012, Volume 48, Issue 21, p.1340–1341
J3. Baile Chen, W.Y. Jiang, A. L. Holmes Jr, “Design of Strain Compensated InGaAs/GaAsSb Type-II Quantum Well Structures for Mid-infrared Photodiodes” Optical and Quantum Electronics, Volume 44, Issue 3 (2012), Page 103-109
J2. Baile Chen, W.Y. Jiang, Jinrong Yuan, A. L. Holmes Jr, Bora. M. Onat “SWIR/MWIR InP-based PIN Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells” IEEE QUANTUM ELECTRONICS, VOL. 47, ISSUE 9, September, 2011, 1244-1250
J1. Baile Chen, W.Y. Jiang, Jinrong Yuan, A. L. Holmes Jr, Bora. M. Onat. “Demonstration of a Room Temperature InP-based Photodetector Operating beyond 3 μm”, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 23, NO. 4, FEBRUARY 15, 2011, 218-220
Conference papers and talks:
C46. Zhijian Shen, Jinshan Yao, Hong Lu, Baile Chen, “Mid-Wave Infrared High-Speed InAs/GaSb Superlattice Uni-Traveling Carrier Photodetector”, 2023 Opto-Electronics and Communications Conference (OECC)
C45. Linze Li, Luyu Wang, Baile Chen, “High-speed Waveguide Modified Uni-Traveling Carrier Photodiodes with 130 GHz Bandwidth”, 2023 Opto-Electronics and Communications Conference (OECC)
C44. Hao Xie, Huijun Guo, Liqi Zhu, Liao Yang, Chuan Shen, Baile Chen, Lu Chen, Li He, “Research on high gain-bandwidth product mid-wavelength infrared HgCdTe avalanche photodiodes”, Earth and Space: From Infrared to Terahertz (ESIT 2022), SPIE 2023 Vol. 12505
C43. L. Wang, Z. Xie, Z. Zhou and B. Chen, “GaAs-Based Modified Uni-Traveling Carrier Photodetector for Simultaneous High-Speed Data Transmission and DC Electrical Power Generation”, 2022 Asia Communications and Photonics Conference (ACP) 5-8 Nov. 2022 2022
C42. Z. Dai, J. Huang and B. Chen, “MWIR InAs/InAsSb type-II Superlattice Photodetector for High-Speed Operation”, 2022 IEEE Photonics Conference (IPC) 13-17 Nov. 2022 2022
C41. Zhijian Shen, Baile Chen, “Mid-wavelength/Long-wavelength Infrared Photodetectors Grown on Si or Ge Substrate”, Progress In Electromagnetics Research Symposium, 2022/04/25-27, online, (Invited)
C40. Baile Chen, “高速二类超晶格探测器”, 上海传感技术发展与应用峰会, 2021/12/27, Shanghai, (Invited)
C39. Baile Chen, “High Speed Type-II Superlattice Photodetectors”, The 7th Asia Pacific Conference on Optics Manufacture & 2021 International Forum of Young Scientists on Advanced Optical Manufacturing, 28- 31 October 2021, Shanghai (Invited)
C38. Baile Chen, “High Speed MIR Photodetectors”, 中国物理学会2021年秋季会议, 2021/10/21-24, online (Invited)
C37. Baile Chen, “Type-II high-speed photodiodes”, IEEE Photonics Conference, 17 - 21 October 2021, online, (Invited)
C36. Baile Chen, “硅基InAs量子点探测器”, 2021硅基光电子论坛(ISSBO 2021), 2021/08/25, online (Invited)
C35. Baile Chen, “High Speed 2 µm Photodetectors and beyond”, The 19th International Conference on Optical Communications and Networks, 2021/08/23, online (Invited)
C34. Zhiyang Xie, Zhiqi Zhou, Linze Li, Baile Chen, “基于GaAs/AlGaAs的850nm波段零偏压高速光电探测器”, 第二十三届全国半导体物理会议，2021/07/10，Xi’an, Shanxi
C33. Zhijian Shen, Zhuo Deng, Xuyi Zhao, Jian Huang, Lu Yao, Xinbo Zou, Chunfang Cao, Qian Gong, Baile Chen, “长波红外亚单层量子点量子级联探测器”, 第二十三届全国半导体物理会议，2021/07/10，Xi’an, Shanxi
C32. Liqi Zhu, Chun Lin, Baile Chen, “HgCdTe中红外电子型雪崩探测器变温特性”, 第二十三届全国半导体物理会议，2021/07/10，Xi’an, Shanxi
C31. Baile Chen, “高速二类超晶格探测器”, 第二十三届全国半导体物理会议，2021/07/10，Xi’an, Shanxi (Invited Talk)
C30. Baile Chen, “高速短波红外/中波红外探测器”， 2021 集成光子学大会， 6/18/2021, Chengdu, Sichuang (Invited Talk)
C29. Baile Chen“高速二类超晶格探测器”, 第十六届全国激光技术与光电子学学术会议(LTO2021)，2021/06/05，Shanghai (Invited Talk)
C28. Zongheng Xie, Zhuo Deng, Jian Huang, Zhiyang Xie, Zhiqi Zhou, Baile Chen, “InP based e-SWIR phototransistors with type-II absorber”, May, 10th, 2021, Compound Semiconductor Week
C27. Baile Chen, “高速短波红外/中波红外探测器”， 第五届光电探测与传感技术研讨会， 12/11/2020, Kunming, Yunnan (Invited Talk)
C26. Zhiyang Xie, Zhiqi Zhou, Linze Li, Haiming Ji, Baile Chen, “High-speed partial-depleted-absorber photodiode based on GaAs/AlGaAs at 850nm wavelength”, Asia Communications and Photonics Conference, October 24-27, 2020, Beijing, China
C25. Baile Chen, “High speed photodetectors beyond 1.7µm”, The 4th Conference on Micro-nano Optical Technology and Application， September 26th - 28th, 2020, Chengdu, China
C24. Baile Chen, “High Speed SWIR/MWIR Type-II Superlattice Photodetectors”, 5th Optoelectronics Global Conference (OGC 2020), September 7th - 11th, 2020, Shenzhen, China (Invited Talk)
C23. Baile Chen, Yi Zhou, Yaojiang Chen, Zhiyang Xie, Zhuo Deng, Jian Huang, Xuliang Chai, Jianxin Chen, “High speed mid-infrared interband cascade photodetectors”, 9th Applied Optics and Photonics China (AOPC 2020) August 25th-27th, 2020, Xiamen, China
C22. Z Xie, Z Deng, Baile Chen, “InP based SWIR dual-band photodetector”, Conference on Lasers and Electro-Optics/Pacific Rim, C11B_2
C21. Weihong Shen, Jiangbing Du, Lin Sun, Chang Wang, Ke Xu, Baile Chen, and Zuyuan He, “100-Gbps 100-m Hollow-Core Fiber Optical Interconnection at 2-micron by PS-DMT”, Optical Fiber Communication Conference (OFC) 2020, OSA Technical Digest, paper Th2A.1.
C20. Yaojiang Chen, Xuliang Chai, Zhiyang Xie, Zhuo Deng, Ningtao Zhang, Yi Zhou, Zhicheng Xu, Jianxin Chen, Baile Chen, “Two-Stage Interband Cascade Infrared Photodetector based on InAs/GaSb Type-II Superlattice for High Speed Mid-Wave Infrared Applications”, Asia Communications and Photonics Conference, Chengdu, November 2-5, 2019
C19. Yaojiang Chen, Zhiyang Xie, Baile Chen, “25 GHz Bandwidth High Speed Photodiode for Two- Micron Wavelength Application”, IEEE Photonics Conference, San Antonio, TX, United States, September 30th - October 3rd 2019
C18. Jian Huang, Baile Chen, Zhuo Deng, Yi Gu, Yingjie Ma, Jian Zhang, Xiren Chen, Jun Shao “Characterization of deep levels in InP based InGaAsBi photodetector”, IEEE Photonics Conference, San Antonio, TX, United States, September 30th - October 3rd 2019
C17. Yaojiang Chen, Baile Chen, “High Speed and High Power Photodiode with 50 GHz Bandwidth”, International Conference on Optical Communications and Networks (ICOCN), Huangshan, Anhui, Aug. 5-8, 2019
C16. Baile Chen, “Si based MWIR photodetectors”, Light conference, July 17-18, 2019, Changchun, China, (Invited Talk)
C15. Baile Chen, “高速InP基二类超晶格探测器”, 第二十二届全国半导体物理学术会议Hangzhou, July 9-12, 2019
C14. Zhiyang Xie, Yaojiang Chen, Baile Chen, “High-speed uni-travelling carrier photodiode at 1064nm wavelength” April 19-23, 2019, Nara, Japan, Compound Semiconductor Week (CSW)
C13. Baile Chen, “InP based type-II superlattice photodetectors”, 第二届全国锑化物半导体学术及产业促进大会，January 9-10, Guanzhou，China (Invited Keynote Speaker)
C12. Jian Huang, Daqian Guo, Zhuo Deng, Huiyun Liu, Jiang Wu, Baile Chen, “Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate”, Asia Communications and Photonics Conference, October 26-29, 2018, Hangzhou, China
C11. Yaojiang Chen, Qian Gong, Baile Chen, “Speed Characterization of InGaAs/GaAsSb Type-II Quantum Wells PIN Photodiodes”, Asia Communications and Photonics Conference, October 26-29, 2018, Hangzhou, China
C10. Yaojiang Chen, Baile Chen, “Uni-Traveling Carrier Photodiode for High Speed and High Power Application”, Asia Communications and Photonics Conference, October 26-29, 2018, Hangzhou, China
C9. Wei Chen, Zhuo Deng, Baile Chen, Huiyun Liu, Jiang Wu, “Dark Current Analysis of Mid-Wave Quantum Dots-in-a-Well Photodetectors Monolithically Grown on Silicon Substrate”, Asia Communications and Photonics Conference, October 26-29, 2018, Hangzhou, China
C8. Jian Huang, Daqian Guo, Zhuo Deng, Wei Chen, Tinghui Wu, Yaojiang Chen, Huiyun Liu, Jiang Wu, Baile Chen, “Quantum Dot Quantum Cascade Detector on Si Substrate”, CLEO, Laser Science to Photonic Applications, 13-18, May, 2018, San Jose, CA, USA
C7. Baile Chen, A. L. Holmes Jr, Viktor Khalfin, Igor Kudryashov, Bora. M. Onat. “Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k·p method” SPIE Defense, Security, and Sensing 2012, 23 - 27 April 2012, Baltimore, Maryland, USA
C6. Baile Chen, Wenlu Sun, Joe C. Campbell and A. L. Holmes Jr. “Quantum Efficiency Modeling of PIN Photodiodes with InGaAs/GaAsSb Quantum Wells Absorption Region” 2011 IEEE Photonics Conference, 9-13 October 2011, Arlington, Virginia, USA, Page 35, Paper MD4
C5. Wenlu Sun, Xiaoguang Zheng, Zhiwen Lu, Baile Chen, Archie L. Holmes Jr. and Joe C. Campbell “Numerical Simulation of InAlAs/InAlGaAs Tandem Avalanche Photodiodes” 2011 IEEE Photonics Conference, 9-13 October 2011, Arlington, Virginia, USA, Page 280, Paper TuK3.
C4. Wenjie. Chen, Baile Chen, J. Yuan, A. Holmes, and P. Fay, “Characterization and Impact of Traps in Lattice-Matched and Strain-Compensated In1-xGaxAs/GaAs1-ySby Multiple Quantum Well Photodiodes” Device Research Conference Jun 18-20, 2012 Penn State University, University Park, PA, USA.
C3. Baile Chen, A. L. Holmes Jr, W.Y. Jiang, Jinrong Yuan, “Design of Strain Compensated InGaAs/GaAsSb Type-II Quantum Well Structures for Mid-infrared Photodiodes” 11th Annual NUSOD Conference, 5-8 September 2011, Rome, Italy, Paper ThC4
C2. Baile Chen, Jinrong Yuan, A. L. Holmes Jr. “Modeling of the electrical characteristics of SWIR/MWIR InGaAs/GaAsSb type-II MQW photodiodes” SPIE Defense, Security, and Sensing 2011, 25 – 29, April 2011, Orlando, Florida, USA
C1. Weiyang Jiang, Baile Chen, Jinrong Yuan, A. L. Holmes Jr. “Design and characterization of strain-compensated GaInAs/GaAsSb type-II MQW structure with operation wavelength at ~3 µm” SPIE Defense, Security, and Sensing 2010, 5 – 9, April 2010, Orlando, Florida, USA.
