News & Updates
December 30, 2021: Dr. Yang was invited to give a seminar on "Emerging Technologies in Magnetic Storage" in School of Microelectronics, Shanghai University .
December 18, 2021: Our work, entittled "Optimal Spin Polarization for Spin-Orbit-Torque Memory and Oscillator", with Prof. Zhifeng Zhu, has been accepted by IEEE Transaction on Electron Devices. Congrats Zhenxiao!
December 16, 2021: Our invited review "An Overview of In-memory Computing Based on Magnetic Random Access Memory" (in Chinese), with Haoyu Chen at Shanghai Huali Microelectronics Co., Ltd has been accepted by Journal of Functional Materials and Devices. Congrats Jialun!
December 14, 2021: Our collaboration work "Controlled growth of ultrathin ferromagnetic β-MnSe semiconductor", with Prof. Lixing Kang at SINANO, CAS has been accepted by SmartMat. Congrats!
December 3, 2021: Our previous visiting PhD student (now a postdoc at SIMIT, CAS) Dr. Huishan Wang was re-attached to the group as a visiting scholar. Welcome!
November 29, 2021: We started a collaboration project with Prof. Zhiqiang Mu at SIMIT, CAS to develop VESOI substrates based GAA-MOSFET with high-k gate materials.
October 16, 2021: Dr. Yang attended the 5th "Spintronics for Quantum State Manipulation Forum" held by Chinese Physics Society at Dalian. Cheers!
September 18, 2021: Our collaboration work "Narrow-Band Semiconductor Heterostructures for Efficient Spintronic Memory Device Applications", with Prof. Xufeng Kou, has been accepted for oral presentation at the 65th IEEE International Electron Devices Meeting, to be held in December 11-15, 2021. Congrats!
September 10, 2021: Welcome three academic master students Bin Rong, Yanghui Liu and Yaqi Rong joined the group. Cheers!
September 7, 2021: Our work, entittled "Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET", has been accepted for oral presentation at the 4th IEEE International Conference on Integrated Circuits, Technologies & Applications, to be held in November 24-26, 2021. Congrats Yijun!
August 23, 2021: Our collaboration work "Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate" with Prof. Zhiqiang Mu at SIMIT, CAS has been accepted by IEEE Electron Device Letters. Congrats!
